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TinyM0核心例程---A/D转换,用户编程调试程序时,默认使用DebugInFlash调试模式 若选择使用ReleaseInFlash模式,下载完程序后芯片将采用CRP2级加密,下一次进行程序下载或调试时,需要先用K-Flash或FlashMagic对芯片进行擦除。 -TinyM0 core routines--- A/D conversion, user programmable debugger, the default DebugInFlash debug mode If you choose to use ReleaseInFlash mode, downloaded program will use CRP2 after the chip-level encryption, the next time the program downloading or debugging, need to use the K-Flash or FlashMagic chip erase.
Update : 2024-05-20 Size : 312320 Publisher : liu

CC430f5137的FLASH读写、擦除操作,希望对大家有帮助。-CC430f5137 the FLASH read and write, erase operation, we want to help.
Update : 2024-05-20 Size : 1024 Publisher : 李百良

SCM123
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用K1设定一个数据, 先用K2擦除指定FLASH扇区 再按K3保存数据 * 再按K4把数据调到数码管显示,与先前设定的数据对比下。 * 也可以关掉电源后开机,按K4即可显示先前保存的数据 -A data set with K1, first erase the specified K2 K3 FLASH sector and then save the data* and then the data transferred to K4 digital display, and the contrast of the previous data set.* Can also turn off the power, according to K4 to display previously saved data
Update : 2024-05-20 Size : 8192 Publisher : 闻晶

SCMAT45DB
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AT45DB大容量存储芯片的读、写及擦除操作-AT45DB Flash read、write and erase
Update : 2024-05-20 Size : 6144 Publisher : pengpengx

使用STM32F103系列CPU,通过SPI控制FLASH,进行读写擦除等操作-Use STM32F103 series CPU, controlled via SPI FLASH, read and write erase and other operations
Update : 2024-05-20 Size : 2048 Publisher : 浩子

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UART功能,可以增加在NIOS2內,主要來做外部Flash的擦除及寫入,需搭配上位機傳輸字串來控制-UART function, can increase the NIOS2, the main external Flash to do the erase and write, to be a string with the host computer to control the transmission
Update : 2024-05-20 Size : 2048 Publisher : pin

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通过单片机编程实现Flash AT45DB161读、写、擦除功能。调试通过-Through the microcontroller programming Flash AT45DB161 read, write, erase function. Debugging
Update : 2024-05-20 Size : 4096 Publisher : weixing

本文件为用Verilog写的FLASH S29AL032D读和擦除的驱动时序,对刚学习Verilog的同学有一定帮助,已在DE2开发板上验证。-This document is written in Verilog FLASH S29AL032D read and erase the drive timing of the students just learning Verilog will definitely help, has verified the DE2 board.
Update : 2024-05-20 Size : 1024 Publisher : 刘春雪

STM32编程模板下做的SPI与FLASH通信,具备读写擦除扇区功能,硬件开发板为火牛开发板-Done under the STM32 SPI programming templates and FLASH communications, with read and write erase sector,
Update : 2024-05-20 Size : 2952192 Publisher : chenmeiyue

SST25VF032B的驱动程序,能实现此flash芯片的读写与擦除功能!-SST25VF032B driver to achieve this flash chip read and write and erase functions!
Update : 2024-05-20 Size : 1672192 Publisher : 李九高

本源码是基于S3C—6430的ARM11嵌入式开发板的NAND FLASH程序的编写。NAND写回速度快、芯片面积小,特别是大容量使其优势明显。页是NAND中的基本存贮单元,一页一般为512 B(也有2 kB每页的large page NAND FLASH),多个页面组成块。不同存储器内的块内页面数不尽相同,通常以16页或32页比较常见。块容量计算公式比较简单,就是页面容量与块内页面数的乘积。根据FLASH Memory容量大小,不同存储器中的块、页大小可能不同,块内页面数也不同。例如:8 MB存储器,页大小常为512 B、块大小为8 kB,块内页面数为16。而2 MB的存储器的页大小为256 B、块大小为4 kB,块内页面数也是16。NAND存储器由多个块串行排列组成。实际上,NAND型的FLASHMemory可认为是顺序读取的设备,他仅用8 b的I/O端口就可以存取按页为单位的数据。NAND在读和擦写文件、特别是连续的大文件时,速度相当快。-NAND write-back speed, small chip area, especially the large capacity make it obvious advantages. Page in the NAND storage unit, a general 512 B, (also have 2 kB per page large page NAND FLASH), multiple page composition. Number of pages within the memory block is different, usually more common 16 or 32. Block capacity formula is relatively simple, is the product of the page capacity and number of pages in the block. FLASH Memory size memory block, the page size may be different, the number of pages in the block. For example: 8 MB of memory, the page size is often 512 B, the block size of 8 kB, the number of pages in the block 16. The page size of 2 MB of memory, 256 B, the block size is 4 kB block, number of pages is 16. NAND memory by more than one block of the serial arrangement. In fact, NAND FLASHMemory can be considered to be the order of read devices, he took only 8-b I/O ports can access the data by page. NAND read and erase files, especially consecutive large files very fast.
Update : 2024-05-20 Size : 3072 Publisher : wangan

SCMWE1
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瑞萨M16C EW1模式,可在线擦除FLASH-Renesas M16C EW1 mode, online erase FLASH
Update : 2024-05-20 Size : 16384 Publisher : YL

在ARM微处理器 中实现对nand flash 中的读,写,擦除功能-ARM microprocessor in the NAND Flash read, write, and erase functions
Update : 2024-05-20 Size : 71680 Publisher : 彭亦钊

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Flash通信,块擦除,整片擦除flash及对flash的读写和使能函数功能,也是通过spi借口通讯。-Flash communication, block erase, full chip erase flash and the flash read and write, and enable function, but also by spi excuse communications.
Update : 2024-05-20 Size : 2048 Publisher : 小陈

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C8051f500 Flash读写擦除操作-C8051f500 Flash read and write erase operation
Update : 2024-05-20 Size : 3072 Publisher : 贺明建

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winbond 25x16 flash芯片 片内2m空间,擦写程序。-The winbond 25x16 flash 2m space in the chip-chip, erase the program.
Update : 2024-05-20 Size : 38912 Publisher : wz

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SN8F27E6x 单片机是一种资源丰富,使用方便的新品种,这是它的 ISP flash ROM 擦除,编程写入,读取测试程序(已上仿真器运行通过).特提供给朋友们参考.-SN8F27E6x MCU is a resource-rich, easy to use new varieties, which is its ISP flash ROM erase, program writing, reading test program (has been run through the emulator). Teti supply of friends as a reference.
Update : 2024-05-20 Size : 1024 Publisher : 蓝天

详细说明了在WINCE操作系统下,如何实现对flash的读、写、擦除等。-Described in detail in the WINCE operating system, how to achieve the flash read, write, erase and so on.
Update : 2024-05-20 Size : 9216 Publisher : LiDeSheng

stm32f103处理器的flash初始化,对外部flash的读写、擦除灯操作-stm32f103 processor flash initialization, external flash read and write, erase lamp operation
Update : 2024-05-20 Size : 201728 Publisher : 董德胜

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Flash存储器简介、编程以及擦除原理的详细介绍-Flash memory programming and erase the principle
Update : 2024-05-20 Size : 887808 Publisher : boyzone
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